X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

Jun Wan; Z. M. Jiang; D. W. Gong; Y. L. Fan; C. Sheng; Xun Wang

doi:10.1103/PhysRevB.59.10697

X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

Jun Wan, Z. M. Jiang, D. W. Gong, Y. L. Fan, C. Sheng, Xun Wang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Synchrotron radiation x-ray reflectivity measurement is used to study the concentration profile of a δ-doped Er layer in Si epitaxial film grown by molecular-beam epitaxy. The oscillation of the reflectivity amplitude as a function of reflection angle is observed in the experiment. By doing a theoretical simulation, the concentration profile of Er atoms could be derived. It is shown that the originally grown δ-doped Er layer changes into an exponentially decayed function due to the Er segregation. The temperature dependence of the 1/e decay length indicates that the segregation is a kinetically limited process. The activation energy is determined to be 0.044±0.005 eV.

Original language	English (US)
Pages (from-to)	10697-10700
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.59.10697
State	Published - 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.59.10697

Cite this

@article{19dd6378740149d0b81e8e3490ebee3a,

title = "X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer",

abstract = "Synchrotron radiation x-ray reflectivity measurement is used to study the concentration profile of a δ-doped Er layer in Si epitaxial film grown by molecular-beam epitaxy. The oscillation of the reflectivity amplitude as a function of reflection angle is observed in the experiment. By doing a theoretical simulation, the concentration profile of Er atoms could be derived. It is shown that the originally grown δ-doped Er layer changes into an exponentially decayed function due to the Er segregation. The temperature dependence of the 1/e decay length indicates that the segregation is a kinetically limited process. The activation energy is determined to be 0.044±0.005 eV.",

author = "Jun Wan and Jiang, {Z. M.} and Gong, {D. W.} and Fan, {Y. L.} and C. Sheng and Xun Wang",

year = "1999",

doi = "10.1103/PhysRevB.59.10697",

language = "English (US)",

volume = "59",

pages = "10697--10700",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

AU - Wan, Jun

AU - Jiang, Z. M.

AU - Gong, D. W.

AU - Fan, Y. L.

AU - Sheng, C.

AU - Wang, Xun

PY - 1999

Y1 - 1999

N2 - Synchrotron radiation x-ray reflectivity measurement is used to study the concentration profile of a δ-doped Er layer in Si epitaxial film grown by molecular-beam epitaxy. The oscillation of the reflectivity amplitude as a function of reflection angle is observed in the experiment. By doing a theoretical simulation, the concentration profile of Er atoms could be derived. It is shown that the originally grown δ-doped Er layer changes into an exponentially decayed function due to the Er segregation. The temperature dependence of the 1/e decay length indicates that the segregation is a kinetically limited process. The activation energy is determined to be 0.044±0.005 eV.

AB - Synchrotron radiation x-ray reflectivity measurement is used to study the concentration profile of a δ-doped Er layer in Si epitaxial film grown by molecular-beam epitaxy. The oscillation of the reflectivity amplitude as a function of reflection angle is observed in the experiment. By doing a theoretical simulation, the concentration profile of Er atoms could be derived. It is shown that the originally grown δ-doped Er layer changes into an exponentially decayed function due to the Er segregation. The temperature dependence of the 1/e decay length indicates that the segregation is a kinetically limited process. The activation energy is determined to be 0.044±0.005 eV.

UR - http://www.scopus.com/inward/record.url?scp=16344363292&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=16344363292&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.59.10697

DO - 10.1103/PhysRevB.59.10697

M3 - Article

AN - SCOPUS:16344363292

SN - 1098-0121

VL - 59

SP - 10697

EP - 10700

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this