The annealing behaviors of photoluminescence of SiOx and Er-doped SiOx grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiOx, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiOx, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO2, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO2 to Er ions.
- Silicon oxide
- Transmission electron microscopy
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics