Visible and infrared photoluminescence from Er-doped SiOx

J. Wan; C. Sheng; F. Lu; S. Yuan; D. W. Gong; L. S. Liao; Y. L. Fang; F. Lin; Xun Wang

doi:10.1016/S0022-2313(98)00131-8

Visible and infrared photoluminescence from Er-doped SiO_x

J. Wan, C. Sheng, F. Lu, S. Yuan, D. W. Gong, L. S. Liao, Y. L. Fang, F. Lin, Xun Wang

School of Medicine

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The annealing behaviors of photoluminescence of SiO_x and Er-doped SiO_x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO_x, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO_x, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO₂, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO₂ to Er ions.

Original language	English (US)
Pages (from-to)	369-373
Number of pages	5
Journal	Journal of Luminescence
Volume	80
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-2313(98)00131-8
State	Published - Dec 1998

Keywords

Erbium
Oxygen
Photoluminescence
Silicon oxide
Transmission electron microscopy

ASJC Scopus subject areas

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/S0022-2313(98)00131-8

Cite this

@article{10741607af834255b982052ebebbce67,

title = "Visible and infrared photoluminescence from Er-doped SiOx",

abstract = "The annealing behaviors of photoluminescence of SiOx and Er-doped SiOx grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiOx, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiOx, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO2, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO2 to Er ions.",

keywords = "Erbium, Oxygen, Photoluminescence, Silicon oxide, Transmission electron microscopy",

author = "J. Wan and C. Sheng and F. Lu and S. Yuan and Gong, {D. W.} and Liao, {L. S.} and Fang, {Y. L.} and F. Lin and Xun Wang",

note = "Funding Information: This work was supported by the Ministry of Science and Technology and the National Natural Science Foundation of China. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "1998",

month = dec,

doi = "10.1016/S0022-2313(98)00131-8",

language = "English (US)",

volume = "80",

pages = "369--373",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Visible and infrared photoluminescence from Er-doped SiOx

AU - Wan, J.

AU - Sheng, C.

AU - Lu, F.

AU - Yuan, S.

AU - Gong, D. W.

AU - Liao, L. S.

AU - Fang, Y. L.

AU - Lin, F.

AU - Wang, Xun

N1 - Funding Information: This work was supported by the Ministry of Science and Technology and the National Natural Science Foundation of China. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 1998/12

Y1 - 1998/12

N2 - The annealing behaviors of photoluminescence of SiOx and Er-doped SiOx grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiOx, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiOx, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO2, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO2 to Er ions.

AB - The annealing behaviors of photoluminescence of SiOx and Er-doped SiOx grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiOx, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiOx, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO2, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO2 to Er ions.

KW - Erbium

KW - Oxygen

KW - Photoluminescence

KW - Silicon oxide

KW - Transmission electron microscopy

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DO - 10.1016/S0022-2313(98)00131-8

M3 - Article

AN - SCOPUS:0347092492

SN - 0022-2313

VL - 80

SP - 369

EP - 373

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-4

ER -