Visible and infrared photoluminescence from Er-doped SiOx

J. Wan, C. Sheng, F. Lu, S. Yuan, D. W. Gong, L. S. Liao, Y. L. Fang, F. Lin, Xun Wang

Research output: Contribution to journalArticle

Abstract

The annealing behaviors of photoluminescence of SiOx and Er-doped SiOx grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiOx, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiOx, the 716 nm band, which is believed to be originated from the electron-hole recombination at the interface between crystalline Si and amorphous SiO2, disappears in the annealing temperature range of 500-900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO2 to Er ions.

Original languageEnglish (US)
Pages (from-to)369-373
Number of pages5
JournalJournal of Luminescence
Volume80
Issue number1-4
DOIs
StatePublished - Dec 1998

Keywords

  • Erbium
  • Oxygen
  • Photoluminescence
  • Silicon oxide
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Visible and infrared photoluminescence from Er-doped SiO<sub>x</sub>'. Together they form a unique fingerprint.

  • Cite this

    Wan, J., Sheng, C., Lu, F., Yuan, S., Gong, D. W., Liao, L. S., Fang, Y. L., Lin, F., & Wang, X. (1998). Visible and infrared photoluminescence from Er-doped SiOx. Journal of Luminescence, 80(1-4), 369-373. https://doi.org/10.1016/S0022-2313(98)00131-8