Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition

R. Kraya, J. Baskar, A. Arceo, H. E. Katz, Nitish V Thakor

Research output: Contribution to journalArticle

Abstract

The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains.

Original languageEnglish (US)
Pages (from-to)41-45
Number of pages5
JournalThin Solid Films
Volume664
DOIs
StatePublished - Oct 31 2018

Fingerprint

Aluminum
Sol-gels
gels
Annealing
aluminum
Thin films
electrical resistivity
annealing
Substrates
thin films
polyimides
Polyimides
heat treatment
Microwaves
Vacuum
Low temperature operations
microwaves
silicon
Silicon
Film growth

Keywords

  • Conductance
  • Flexible substrates
  • Sol gel
  • Thin films
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Ultra-low resistivity aluminum doped ZnO thin films on flexible substrates using sol-gel solution deposition. / Kraya, R.; Baskar, J.; Arceo, A.; Katz, H. E.; Thakor, Nitish V.

In: Thin Solid Films, Vol. 664, 31.10.2018, p. 41-45.

Research output: Contribution to journalArticle

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abstract = "The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1{\%} Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains.",
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AU - Arceo, A.

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AU - Thakor, Nitish V

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N2 - The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains.

AB - The effect of a combination of low temperature heat treatments, microwave annealing, and low temperature vacuum annealing on the resistivity of 1% Al-doped ZnO thin films (AZO) deposited on both flexible polyimide films and rigid silicon substrates was investigated. The sol-gel deposition technique was used to deposit successive layers with a 0.5-hour heat treatment application prior to the deposition of additional layers. Following the final layer deposition and 0.5-hour treatment, the samples either underwent a final thermal annealing or microwave plus thermal annealing. Finally, a post-treatment annealing in a high vacuum chamber at 300 °C was administered. The films exhibited ultra-low resistivity of 14 Ω-cm on the polyimide with good adhesion qualities and a 0.08 Ω-cm resistivity on silicon wafers. A hexagonal wurtzite structure with the (002) c-axis orientation in the film growth direction was evident along with a dense microstructure of homogeneously distributed grains.

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