The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces

R. A. Kraya, L. Y. Kraya

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Abstract

We have measured the electronic structure at Au nanoisland - niobium doped SrTiO 3 interfaces over a range of contact diameters. Electron transport processes at the interface transition from thermionic emission dominated to tunneling dominated, leading to ohmic behavior at small sizes. The transition increases at a much higher rate than is generally expected, emphasizing the need for precise control of nanoscale dimensions for reproducible effects in nanoscale electronic devices.

Original languageEnglish (US)
Article number064302
JournalJournal of Applied Physics
Volume111
Issue number6
DOIs
StatePublished - Mar 15 2012

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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