Temperature dependence of noise equivalent temperature change of Pt/Si/p-Si composites in the 3-5 μm wavelength range

Clayton W. Bates, Alphonso J. Hendricks, Isaac N. Bankman, Michael E. Thomas, Daniel T. Prendergast

Research output: Contribution to journalArticle

Abstract

The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.

Original languageEnglish (US)
Article number092109
JournalApplied Physics Letters
Volume88
Issue number9
DOIs
StatePublished - Feb 27 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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