### Abstract

The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.

Original language | English (US) |
---|---|

Article number | 092109 |

Journal | Applied Physics Letters |

Volume | 88 |

Issue number | 9 |

DOIs | |

State | Published - Feb 27 2006 |

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### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

*Applied Physics Letters*,

*88*(9), [092109]. https://doi.org/10.1063/1.2181650

**Temperature dependence of noise equivalent temperature change of Pt/Si/p-Si composites in the 3-5 μm wavelength range.** / Bates, Clayton W.; Hendricks, Alphonso J.; Bankman, Isaac N.; Thomas, Michael E.; Prendergast, Daniel T.

Research output: Contribution to journal › Article

*Applied Physics Letters*, vol. 88, no. 9, 092109. https://doi.org/10.1063/1.2181650

}

TY - JOUR

T1 - Temperature dependence of noise equivalent temperature change of Pt/Si/p-Si composites in the 3-5 μm wavelength range

AU - Bates, Clayton W.

AU - Hendricks, Alphonso J.

AU - Bankman, Isaac N.

AU - Thomas, Michael E.

AU - Prendergast, Daniel T.

PY - 2006/2/27

Y1 - 2006/2/27

N2 - The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.

AB - The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.

UR - http://www.scopus.com/inward/record.url?scp=33644691240&partnerID=8YFLogxK

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U2 - 10.1063/1.2181650

DO - 10.1063/1.2181650

M3 - Article

AN - SCOPUS:33644691240

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092109

ER -