The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)