### Abstract

The temperature dependence of noise equivalent temperature change (NEΔT) in Kelvin was obtained for PtSip-Si planar Schottky diodes for temperatures from 50 to 150 K. Over this range NEΔT is 0.2 K at 120 K, remaining below 1 K up to about 130 K assuming a typical quantum efficiency of 1%, due essentially to the large leakage current from the metal into the semiconductor. A calculation assuming recently measured values of the transport properties for a PtSip-Si composite system shows that a NEΔT of less than 0.2 K is attainable at 300 K for a film thickness of 0.5 μm, with PtSi particle sizes of 3 nm with a 15% volume fraction and a 1% quantum efficiency. The leakage here is determined by charge transfer between the metallic grains. At higher efficiencies it is possible to produce a wider range of particle sizes and volume fractions with NEΔT 's smaller than 0.5 K.

Original language | English (US) |
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Article number | 092109 |

Journal | Applied Physics Letters |

Volume | 88 |

Issue number | 9 |

DOIs | |

State | Published - Feb 27 2006 |

### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

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## Cite this

*Applied Physics Letters*,

*88*(9), [092109]. https://doi.org/10.1063/1.2181650