Polysilicon diodes as temperature sensors for chemical microreaction systems

S. V. Karnik, H. X. Vo, M. K. Hatalis, M. V. Kothare

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems.

Original languageEnglish (US)
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages174-177
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - 2001
Externally publishedYes
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: Dec 5 2001Dec 7 2001

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2001
Country/TerritoryUnited States
CityWashington
Period12/5/0112/7/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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