Photoluminescence of Er in SiOx

Jun Wan, Chi Sheng, Fang Lu, Da Wei Gong, Yong Liang Fan, Feng Lin, Xun Wang

Research output: Contribution to journalArticlepeer-review

Abstract

Erbium-doped SiOx is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger specstrocopy. Photoluminescence(PL) peaks around the wavelength of 1.53μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures (<100 K) and 150 meV at high temperatures (>100K).

Original languageEnglish (US)
Number of pages1
JournalWuli Xuebao/Acta Physica Sinica
Volume47
Issue number10
StatePublished - Oct 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Photoluminescence of Er in SiO<sub>x</sub>'. Together they form a unique fingerprint.

Cite this