Oxygen δ-doped Si multi-layers grown by molecular beam epitaxy

Chi Sheng, Feng Lin, Dawei Gong, Jun Wan, Yonglian Fan, Xun Wang

Research output: Contribution to journalArticlepeer-review


An oxygen δ-doped Si multilayer structure has been grown by molecular beam epitaxy (MBE). Thermal oxidation of a Si layer prepared by an MBE system at a low oxygen partial pressure resulted in a thin ordered oxide layer with a very flat surface. On the ordered oxide, Si was epitaxied through the solid phase epitaxy. Five periods of Si(2 nm)/SiOx(1 nm) multilayers were grown successfully. The O-doped Si layer (SiOx) was composed of 7 atomic layers and the crystalline structure of the SiOx layer was the same as that of the Si substrate but had a relatively transverse displacement. The in-plane stress restricted the number of the oxide layers grown to a thickness of less than 6 atomic layers. This structure may be the gateway for realizing Si-based quantum wells.

Original languageEnglish (US)
Pages (from-to)1206-1209
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
StatePublished - Mar 1998


  • Light emitting
  • Quantum confinements for electron and hole
  • Quantum well
  • Si-based photoelectric device
  • Si/SiO strained layer superlattice

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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