Optimization of the Germanium Preamorphization Conditions for Shallow-Junction Formation

Mehmet C. Ozturk, Jimmie J. Wortman, Clinton Lee, Carlton M. Osburn, Atul Ajmera, George A. Rozgonyi, Eric Frey, Wei Kan Chu

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, shallow p+-n and n+-p junctions were formed in germanium preamorphized Si substrates.

Original languageEnglish (US)
Pages (from-to)659-668
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume35
Issue number5
DOIs
StatePublished - May 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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