@article{558887165e23421489cf7dc32d9b26ea,
title = "Optimization of the Germanium Preamorphization Conditions for Shallow-Junction Formation",
abstract = "In this study, shallow p+-n and n+-p junctions were formed in germanium preamorphized Si substrates.",
author = "Ozturk, {Mehmet C.} and Wortman, {Jimmie J.} and Clinton Lee and Osburn, {Carlton M.} and Atul Ajmera and Rozgonyi, {George A.} and Eric Frey and Chu, {Wei Kan}",
note = "Funding Information: Manuscript received July 29, 1987; revised November 10, 1987. This work was supported by the Semiconductor Research Corporation. M. C. Ozturk, J. J. Wortman, and C. Lee are with the Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-791 1. C. M. Osburn is with the Microelectronics Center of North Carolina, Research Triangle Park, NC 27709 and with the Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-791 1. A. Ajmera and G. A. Rozgonyi are with the Materials Engineering Department, North Carolina State University, Raleigh, NC 27695-79 16. E. Frey and W. K. Chu are with the Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27514. IEEE Log Number 8819683.",
year = "1988",
month = may,
doi = "10.1109/16.2510",
language = "English (US)",
volume = "35",
pages = "659--668",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}