Microdosimetry: Measured probabilities for energy deposited by mesons in one-micron sites in silicon

John F Dicello, J. N. Bradford, J. F. Dicello, P. T. Dicello, J. D. Doss, G. Johnson, W. McCabe, A. McDermott, M. Paciotti, O. M. Rivera, M. E. Schillaci

Research output: Contribution to journalArticle

Abstract

Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in one-micron equivalent sites in silicon. A new low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m2. These results support our earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.

Original languageEnglish (US)
Pages (from-to)1305-1309
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume33
Issue number6
DOIs
StatePublished - 1986
Externally publishedYes

Fingerprint

pions
mesons
Proportional counters
Silicon
muons
silicon
Probability distributions
Neutrons
low altitude
proportional counters
Data storage equipment
low noise
energy
Electrons
micrometers
chips
neutrons
thresholds
electrons

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering
  • Nuclear and High Energy Physics

Cite this

Dicello, J. F., Bradford, J. N., Dicello, J. F., Dicello, P. T., Doss, J. D., Johnson, G., ... Schillaci, M. E. (1986). Microdosimetry: Measured probabilities for energy deposited by mesons in one-micron sites in silicon. IEEE Transactions on Nuclear Science, 33(6), 1305-1309. https://doi.org/10.1109/TNS.1986.4334597

Microdosimetry : Measured probabilities for energy deposited by mesons in one-micron sites in silicon. / Dicello, John F; Bradford, J. N.; Dicello, J. F.; Dicello, P. T.; Doss, J. D.; Johnson, G.; McCabe, W.; McDermott, A.; Paciotti, M.; Rivera, O. M.; Schillaci, M. E.

In: IEEE Transactions on Nuclear Science, Vol. 33, No. 6, 1986, p. 1305-1309.

Research output: Contribution to journalArticle

Dicello, JF, Bradford, JN, Dicello, JF, Dicello, PT, Doss, JD, Johnson, G, McCabe, W, McDermott, A, Paciotti, M, Rivera, OM & Schillaci, ME 1986, 'Microdosimetry: Measured probabilities for energy deposited by mesons in one-micron sites in silicon', IEEE Transactions on Nuclear Science, vol. 33, no. 6, pp. 1305-1309. https://doi.org/10.1109/TNS.1986.4334597
Dicello, John F ; Bradford, J. N. ; Dicello, J. F. ; Dicello, P. T. ; Doss, J. D. ; Johnson, G. ; McCabe, W. ; McDermott, A. ; Paciotti, M. ; Rivera, O. M. ; Schillaci, M. E. / Microdosimetry : Measured probabilities for energy deposited by mesons in one-micron sites in silicon. In: IEEE Transactions on Nuclear Science. 1986 ; Vol. 33, No. 6. pp. 1305-1309.
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