MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.

J. F. Dicello, J. N. Bradford, J. F. Dicello, P. T. Dicello, J. D. Doss, G. Johnson, W. McCabe, A. McDermott, M. Paciotti, O. M. Rivera, M. E. Schillaci

Research output: Contribution to journalArticle

Abstract

Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in 1- mu m equivalent sites in silicon. A low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m**2. These results support earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
VolumeNS-33
Issue number6
StatePublished - Dec 1 1986

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Dicello, J. F., Bradford, J. N., Dicello, J. F., Dicello, P. T., Doss, J. D., Johnson, G., McCabe, W., McDermott, A., Paciotti, M., Rivera, O. M., & Schillaci, M. E. (1986). MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON. IEEE Transactions on Nuclear Science, NS-33(6).