MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.

J. F. Dicello; J. N. Bradford; J. F. Dicello; P. T. Dicello; J. D. Doss; G. Johnson; W. McCabe; A. McDermott; M. Paciotti; O. M. Rivera; M. E. Schillaci

MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.

J. F. Dicello, J. N. Bradford, J. F. Dicello, P. T. Dicello, J. D. Doss, G. Johnson, W. McCabe, A. McDermott, M. Paciotti, O. M. Rivera, M. E. Schillaci

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in 1- mu m equivalent sites in silicon. A low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m**2. These results support earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.

Original language	English (US)
Journal	IEEE Transactions on Nuclear Science
Volume	NS-33
Issue number	6
State	Published - Dec 1 1986
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

@article{03eaa1946f504d4eb535aa03cd015fa1,

title = "MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.",

abstract = "Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in 1- mu m equivalent sites in silicon. A low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m**2. These results support earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.",

author = "Dicello, {J. F.} and Bradford, {J. N.} and Dicello, {J. F.} and Dicello, {P. T.} and Doss, {J. D.} and G. Johnson and W. McCabe and A. McDermott and M. Paciotti and Rivera, {O. M.} and Schillaci, {M. E.}",

year = "1986",

month = dec,

day = "1",

language = "English (US)",

volume = "NS-33",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - MICRODOSIMETRY

T2 - MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.

AU - Dicello, J. F.

AU - Bradford, J. N.

AU - Dicello, J. F.

AU - Dicello, P. T.

AU - Doss, J. D.

AU - Johnson, G.

AU - McCabe, W.

AU - McDermott, A.

AU - Paciotti, M.

AU - Rivera, O. M.

AU - Schillaci, M. E.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in 1- mu m equivalent sites in silicon. A low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m**2. These results support earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.

AB - Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in 1- mu m equivalent sites in silicon. A low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m**2. These results support earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.

UR - http://www.scopus.com/inward/record.url?scp=0022921350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022921350&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022921350

SN - 0018-9499

VL - NS-33

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

ER -

MICRODOSIMETRY: MEASURED PROBABILITIES FOR ENERGY DEPOSITED BY MESONS IN ONE-MICRON SITES IN SILICON.

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this