Ion channeling and perturbed angular correlation (pac) studies of In-As atom Pairs in silicon

M. L. Swanson, N. R. Parikh, E. C. Frey, TH Wichert

Research output: Contribution to journalArticle

Abstract

Ion channeling and PAC measurements were used to show that InAs atom pairs were formed during epitaxial regrowth of In-implanted Si(As). The pairs had an electric field gradient characterized by a frequency νq = 229 MHz and a 〈111〉 axial symmetry which implied either substitutional or tetrahedral interstitial sites of In atoms. The binding energy of the pairs was strong, as determined by measurement of their thermal equilibrium concentration. Ion channeling data showed that this binding caused an enhanced In solubility in As-doped Si, and that the In atoms in the pairs occupied substitutional lattice sites, rather than tetrahedral interstitial sites. At high As concentration, In-As 2 atom clusters were also observed, and these In atoms were also substitutional.

Original languageEnglish (US)
Pages (from-to)591-594
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume33
Issue number1-4
DOIs
StatePublished - Jun 2 1988
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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