Ion channeling and PAC measurements were used to show that InAs atom pairs were formed during epitaxial regrowth of In-implanted Si(As). The pairs had an electric field gradient characterized by a frequency νq = 229 MHz and a 〈111〉 axial symmetry which implied either substitutional or tetrahedral interstitial sites of In atoms. The binding energy of the pairs was strong, as determined by measurement of their thermal equilibrium concentration. Ion channeling data showed that this binding caused an enhanced In solubility in As-doped Si, and that the In atoms in the pairs occupied substitutional lattice sites, rather than tetrahedral interstitial sites. At high As concentration, In-As 2 atom clusters were also observed, and these In atoms were also substitutional.
ASJC Scopus subject areas
- Nuclear and High Energy Physics