Gluconic acid production by Aspergillus niger mutant ORS-4.410 in submerged and solid state surface fermentation

O. V. Singh, A. Sharma, R. P. Singh

Research output: Contribution to journalArticlepeer-review

Abstract

Aspergillus niger ORS-4.410, a mutant of Aspergillus niger ORS-4 was produced by repeated irradiation with UV rays. Treatments with chemical mutagnes also resulted into mutant strains. The mutants differed from the parent strain morphologically and in gluconic acid production. The relationship between UV treatment dosage, conidial survival and frequency of mutation showed the maximum frequency of positive mutants (25%) was obtained along with a conidial survival of 59% after second stage of UV irradiation. Comparison of gluconic acid production of the parent and mutant ORS-4.410 strain showed a significant increase in gluconic acid production that was 87% higher than the wild type strain. ORS-4.410 strain when transferred every 15 days and monitored for gluconic acid levels for a total period of ten months appeared stable. Mutant ORS-4.410 at 12% substrate concentration resulted into significantly higher i.e. 85-87 and 94-97% yields of gluconic acid under submerged and solid state surface conditions respectively. Further increase in substrate concentration appeared inhibitory. Maximum yield of gluconic acid was obtained after 6 days under submerged condition and decreased on further cultivation. Solid state surface culture condition on the other hand resulted into higher yield after 12 days of cultivation and similar levels of yields continued thereafter.

Original languageEnglish (US)
Pages (from-to)691-696
Number of pages6
JournalIndian journal of experimental biology
Volume39
Issue number7
StatePublished - 2001

ASJC Scopus subject areas

  • Biotechnology
  • Molecular Biology
  • Cell Biology

Fingerprint Dive into the research topics of 'Gluconic acid production by Aspergillus niger mutant ORS-4.410 in submerged and solid state surface fermentation'. Together they form a unique fingerprint.

Cite this