Failure model for silver electrochemical migration

Shuang Yang, Aristos Christou

Research output: Contribution to journalArticle

Abstract

A new model for silver electrochemical migration is presented, which includes the insulation resistance degradation prior to dendritic growth. This failure model reported is based on the calculation of the ion accumulation rate. Failure occurs when the accumulated ion concentration exceeds the threshold. Experimental measurements have been carried out to validate the model. Experiments under various temperature-humidity-bias conditions are reported.

Original languageEnglish (US)
Pages (from-to)188-196
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume7
Issue number1
DOIs
StatePublished - Mar 2007
Externally publishedYes

Fingerprint

Silver
Ions
Insulation
Atmospheric humidity
Degradation
Experiments
Temperature

Keywords

  • Dendrite
  • Electrochemical migration (ECM)
  • Insulation resistance
  • Ion accumulation
  • Ion generation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Failure model for silver electrochemical migration. / Yang, Shuang; Christou, Aristos.

In: IEEE Transactions on Device and Materials Reliability, Vol. 7, No. 1, 03.2007, p. 188-196.

Research output: Contribution to journalArticle

Yang, Shuang ; Christou, Aristos. / Failure model for silver electrochemical migration. In: IEEE Transactions on Device and Materials Reliability. 2007 ; Vol. 7, No. 1. pp. 188-196.
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