Abstract
A new model for silver electrochemical migration is presented, which includes the insulation resistance degradation prior to dendritic growth. This failure model reported is based on the calculation of the ion accumulation rate. Failure occurs when the accumulated ion concentration exceeds the threshold. Experimental measurements have been carried out to validate the model. Experiments under various temperature-humidity-bias conditions are reported.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 188-196 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| State | Published - Mar 2007 |
| Externally published | Yes |
Keywords
- Dendrite
- Electrochemical migration (ECM)
- Insulation resistance
- Ion accumulation
- Ion generation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering