Erratum: The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces (Journal of Applied Physics (2012) 111:6 (064302))

R. A. Kraya; L. Y. Kraya

doi:10.1063/1.4892774

Erratum: The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces (Journal of Applied Physics (2012) 111:6 (064302))

R. A. Kraya, L. Y. Kraya

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	079902
Journal	Journal of Applied Physics
Volume	116
Issue number	7
DOIs	https://doi.org/10.1063/1.4892774
State	Published - Aug 21 2014
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4892774

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Erratum: The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces (Journal of Applied Physics (2012) 111:6 (064302))

ASJC Scopus subject areas

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