Eliminating process-related defects during the fabrication of copper interconnects

Minseok Oh, Deepak A. Ramappa, Daniele Contestable-Gilkes, Sailesh M. Merchant, Douglas E. Jones, Karthikeyan Subramanian, Steve Lytle, Isaiah Oladeji, Chim Seng Seet, He Ming Li

Research output: Contribution to journalConference articlepeer-review


The results of a systematic study undertaken to identify process related defects introduced during the fabrication of low-k dielectric based copper interconnects was presented. The copper electroplating process was examined to reduce the number of plating related defects. The defects from the electroplating process were classified into a defect pareto chart. Efforts were made to reduce defects that were known to be detrimental in device performance.

Original languageEnglish (US)
Pages (from-to)85-89
Number of pages5
JournalAdvanced Metallization Conference (AMC)
StatePublished - Dec 1 2001
Externally publishedYes
EventAdvanced Metallization Conference 2001 (AMC 2001) - Montreal, Que., Canada
Duration: Oct 8 2001Oct 11 2001

ASJC Scopus subject areas

  • Chemical Engineering(all)


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