Electrical transport properties in a single-walled carbon nanotube network

Karim Snoussi, Amin Vakhshouri, Haruya Okimoto, Taishi Takenobu, Yoshihiro Iwasa, Shigeo Maruyama, Katsushi Hashimoto, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

Abstract

We measured and analysed the electronic transport properties of a single-walled carbon nanotube (SWCNT) network on which the nanotubes were deposited by an ink-jet method. The SWCNT network showed an Ohmic behaviour down to a temperature T of 0.5 K. Moreover, the resistance of the SWCNT network exhibited a temperature dependence which indicated a Mott variable-range hopping transport mechanism. A localisation length was extracted and estimated to be between 3.6 and 11 nm; this indicated that the SWCNT sample constituted a 3D network. The magnetoresistance reached a minimum for a certain value of the magnetic field B min. With decreasing the temperature, B min tended linearly to 0 T. This observation was interpreted as the suppression of a quantum interference process between electronic hopping paths through neighbouring defects of the SWCNT network.

Original languageEnglish (US)
Pages (from-to)183-186
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number2
DOIs
StatePublished - Feb 2012

Keywords

  • Carbon nanotube network
  • Electrical transport properties
  • Mott variable-range hopping
  • Quantum interference

ASJC Scopus subject areas

  • Condensed Matter Physics

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