Digital-inverter amine sensing via synergistic responses by n and p organic semiconductors

Noah J. Tremblay, Byung Jun Jung, Patrick Breysse, Howard E. Katz

Research output: Contribution to journalArticle

Abstract

Chemiresistors and sensitive organic field-effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including a rare analyte-induced current increase by the n-channel semiconductor. This is the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. Higher-order logic circuits utilizing organic field-effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p- and n-channel organic semiconductors, including a rare analyte-induced current increase by the n-channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

Original languageEnglish (US)
Pages (from-to)4314-4319
Number of pages6
JournalAdvanced Functional Materials
Volume21
Issue number22
DOIs
StatePublished - Nov 22 2011

Keywords

  • amines
  • organic field-emission transistors (OFETs)
  • semiconductors
  • sensors

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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